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  ? semiconductor components industries, llc, 2006 june, 2006 ? rev. 4 1 publication order number: MBR2045CT/d MBR2045CT switchmode  power rectifier features and benefits ? low forward voltage ? low power loss / high efficiency ? high surge capacity ? 175 c operating junction temperature ? 20 a total (10 a per diode leg) ? pb?free package is available* applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics ? case: epoxy, molded ? epoxy meets ul 94, v?0 @ 0.125 in ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? esd rating: human body model = 3b machine model = c *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com schottky barrier rectifier 20 amperes, 45 volts 1 3 2, 4 device package shipping ordering information MBR2045CT to?220 50 units / rail MBR2045CTg to?220 (pb?free) 50 units / rail to?220ab case 221a style 6 3 4 1 2 marking diagram a = assembly location y = year ww = work week MBR2045CT = device code g = pb?free package aka = diode polarity ayww MBR2045CTg aka
MBR2045CT http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 45 v average rectified forward current per device per diode (t c = 165 c) i f(av) 20 10 a peak repetitive forward current per diode leg (square wave, 20 khz, t c = 163 c) i frm 20 a non?repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 150 a peak repetitive reverse surge current (2.0  s, 1.0 khz) see figure 11 i rrm 1.0 a storage temperature range t stg ?65 to +175 c operating junction temperature (note 1) t j ?65 to +175 c voltage rate of change (rated v r ) dv/dt 1000 v/  s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction?to?ambient: dp d /dt j < 1/r  ja . thermal characteristics characteristic symbol max unit maximum thermal resistance, junction?to?case (min. pad) r  jc 2.0 c/w maximum thermal resistance, junction?to?ambient (min. pad) r  ja 60 electrical characteristics characteristic symbol min typ max unit instantaneous forward voltage (note 2) (i f = 10 amps, t j = 125 c) (i f = 20 amps, t j = 125 c) (i f = 20 amps, t j = 25 c) v f ? ? ? 0.50 0.67 0.71 0.57 0.72 0.84 v instantaneous reverse current (note 2) (rated dc voltage, t j = 125 c) (rated dc voltage, t j = 25 c) i r ? ? 10.4 0.02 15 0.1 ma 2. pulse test: pulse width = 300  s, duty cycle 2.0%.
MBR2045CT http://onsemi.com 3 figure 1. typical forward voltage 1.2 v f , instantaneous voltage (volts) 100 70 5.0 10 3.0 i f , instantaneous forward current (amps) 1.0 0.6 0.2 0.4 0.8 1.0 1.4 2.0 20 0.1 0.5 0.7 30 7.0 0.3 50 t j = 150 c figure 2. maximum forward voltage 0.2 1.2 v f , instantaneous voltage (volts) 100 70 5.0 10 3.0 i f , instantaneous forward current (amps) 1.0 0.6 0.2 0.4 0.8 1.0 0.0 2.0 20 0.1 0.5 0.7 30 7.0 0.3 50 t j = 150 c 0.2 125 c 25 c 125 c 25 c 0.7 0.3 0.5 0.9 1.1 0.1
MBR2045CT http://onsemi.com 4 5.0 15 0 v r , reverse voltage (volts) 10 1.0 0.1 0.01 0.001 10 , reverse current (ma) i r 20 30 25 100 35 40 50 45 figure 3. typical reverse current figure 4. maximum reverse current t j = 150 c 125 c 100 c 75 c 25 c 5.0 15 0 v r , reverse voltage (volts) 10 1.0 0.1 0.01 0.0001 10 , reverse current (ma) i r 20 30 25 100 35 40 50 45 t j = 150 c 125 c 100 c 25 c 140 t c , case temperature ( c) 10 8.0 6.0 2.0 0 145 , average forward current (amps) i f(av) 150 155 18 160 165 figure 5. maximum surge capability figure 6. current derating, case 4 0 i f(av) , average forward current (amps) 16 10 8 4 0 8 , average forward power dissipation (watts) p f(av) 12 20 16 28 24 30 28 figure 7. current derating, ambient, per leg figure 8. forward power dissipation 16 14 12 6 2 18 14 12 dc t j = 175 c square wave dc square wave number of cycles at 60 hz 10 1.0 200 100 50 30 20 3.0 2.0 100 70 i fsm , peak half?wave current (amps) 7.0 5.0 30 20 70 50 0.001 4.0 t a , ambient temperature ( c) 25 0 12 8.0 4.0 0 50 i f(av) , average forward current (amps) 75 175 dc 14 10 6.0 2.0 100 125 square wave dc r  ja = 16 c/w (with to?220 heat sink) r  ja = 60 c/w (no heat sink) 150 16 18 20 170 175 180 20 22 24 26 2 6 10 18 14 22 26
MBR2045CT http://onsemi.com 5 r(t), transient thermal resistance (normalized) 0.01 0.1 1.0 10 100 0.05 0.03 0.02 0.01 0.1 t, time (ms) 0.5 0.3 0.2 1.0 p pk p pk t p t 1 time duty cycle, d = t p /t 1 peak power, p pk , is peak of an equivalent square power pulse.  t jl = p pk ? r  jl [d + (1 ? d) ? r(t 1 + t p ) + r(t p ) ? r(t 1 )] where:  t jl = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t 1 + t p ) = normalized value of transient thermal resistance at time, t 1 + t p , etc. 1000 figure 9. thermal response 0.07 0.7 high frequency operation since current flow in a schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minor- ity carrier injection and stored charge. satisfactory circuit analysis work may be performed by using a model consist- ing of an ideal diode in parallel with a variable capacitance. (see figure 10.) rectification efficiency measurements show that opera- tion will be satisfactory up to several megahertz. for exam- ple, relative waveform rectification efficiency is approxi- mately 70 percent at 2.0 mhz, e.g., the ratio of dc power to rms power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. however, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode ca- pacitance, which lowers the dc output voltage. 2.0  s 1.0 khz 12 v 100 v cc 12 vdc 2n2222 current amplitude adjust 0?10 amps 100 carbon 2n6277 1.0 carbon 1n5817 d.u.t. 2.0 k  +150 v, 10 madc 4.0  f + v r , reverse voltage (volts) 1000 500 300 0 050 700 c, capacitance (pf) figure 10. typical capacitance 10 20 30 200 40 figure 11. test circuit for dv/dt and reverse surge current t j = 25 c f = 1 mhz 100 600 400 800 900
MBR2045CT http://onsemi.com 6 package dimensions to?220 case 221a?09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j style 6: pin 1. anode 2. cathode 3. anode 4. cathode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. MBR2045CT/d switchmode is a trademark of semiconductor components industries, llc. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5773?3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative


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